Pal, J., Migliorato, M.A., Li, C.-K., Wu, Y.-R., Crutchley, B.G., Marko, I.P. and Sweeney, S.J. (2013) Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management. Journal of Applied Physics, 114(7), 073104. (doi: 10.1063/1.4818794)
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Abstract
Strong advances in the growth and device fabrication of nitride semiconductors have led to major improvements of InGaN light emitters in recent years. Solid State lighting, displays, laptop and television back lighting, blue-ray players, pico-projection systems, traffic signal, and automotive applications are a few of the applications which have caused considerable interest in the development of InGaN-based light emitting diodes (LEDs). Continuing improvements in the performance of the InGaN emitters, particularly for green LEDs, are required in order to achieve the full market potential of InGaN-based emitters. One of the major factors limiting the light output power is the presence of in-built polarization fields that originate from the wurtzite crystal structure of III-N semiconductors. Such fields can be high enough to localize carriers at the interfaces and create, through Coulomb repulsion, energy barriers that hinder carrier transportation. With the aim of circumventing such issues, much work has recently been concentrated on understanding how to manage piezoelectric polarization in InGaN/GaN superlattices or producing devices on substrates with non-polar and semi-polar crystal orientations. However, the output powers at high injection current of these devices currently do not outperform the best devices grown on (0001) planes (c-planes).
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marko, Dr Igor and Sweeney, Professor Stephen |
| Authors: | Pal, J., Migliorato, M.A., Li, C.-K., Wu, Y.-R., Crutchley, B.G., Marko, I.P., and Sweeney, S.J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Applied Physics |
| Publisher: | American Institute of Physics |
| ISSN: | 0021-8979 |
| ISSN (Online): | 1089-7550 |
| Related URLs: |
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