Ludewig, P. et al. (2013) Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser. Applied Physics Letters, 102(24), 242115. (doi: 10.1063/1.4811736)
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Abstract
The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates. Electrically injected laser operation at room temperature is achieved with a threshold current density of 1.56 kA/cm2 at an emission wavelength of ∼947 nm. These results from broad area devices show great promise for developing efficient IR laser diodes based on this emerging materials system.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Hild, Dr Konstanze and Marko, Dr Igor and Sweeney, Professor Stephen |
| Authors: | Ludewig, P., Knaub, N., Hossain, N., Reinhard, S., Nattermann, L., Marko, I.P., Jin, S.R., Hild, K., Chatterjee, S., Stolz, W., Sweeney, S.J., and Volz, K. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
| Related URLs: |
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