Bismuth-containing III-V semiconductors: epitaxial growth and physical properties

Batool, Z. et al. (2013) Bismuth-containing III-V semiconductors: epitaxial growth and physical properties. In: Henini, M. (ed.) Molecular Beam Epitaxy: From Research to Mass Production. Elsevier: Amsterdam, pp. 139-158. ISBN 9780123878397 (doi: 10.1016/B978-0-12-387839-7.00007-5)

Abstract

The growth, surface, and bulk properties of GaAsBi and related III-V alloys are examined and the potential benefits of these materials are explored in terms of device applications. The methods used include molecular beam epitaxy growth, scanning tunneling microscopy, scanning electron microscopy, transmission electron microscopy, photoluminescence spectroscopy, deep-level transient spectroscopy, dynamic modeling, and theoretical analysis. The results show that considerable progress has been made in alloying bismuth with GaAs and that the structural, optical, and electronic quality is very good for the alloys investigated.

• Item Type: Book Sections
• Status: Published
• Glasgow Author(s) Enlighten ID: Hild, Dr Konstanze and Sweeney, Professor Stephen
• Authors: Batool, Z., Chatterjee, S., Chernikov, A., Duzik, A., Fritz, R., Gogineni, C., Hild, K., Hosea, T. J.C., Imhof, S., Johnson, S. R., Jiang, Z., Jin, S., Koch, M., Koch, S. W., Kolata, K., Lewis, R. B., Lu, X., Masnadi-Shirazi, M., Millunchick, J. M., Mooney, P. M., Riordan, N. A., Rubel, O., Sweeney, S. J., Thomas, J. C., Thränhardt, A., Tiedje, T., and Volz, K.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Molecular Beam Epitaxy
• Publisher: Elsevier
• ISBN: 9780123878397