Hossain, N., Hosea, J., Liebich, S., Zimprich, M., Volz, K., Kunert, B., Stolz, W. and Sweeney, S.J. (2013) Band Structure Properties of (BGa)P Semiconductors for Lattice Matched Integration On (001) Silicon. In: 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich, Switzerland, 29 Jul–3 Aug 2012, pp. 47-48. ISBN 9780735411944 (doi: 10.1063/1.4848278)
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Abstract
We report the band structure properties of (BGa)P layers grown on silicon substrate using metal-organic vapour-phase epitaxy. Using surface photo-voltage spectroscopy we find that both the direct and indirect band gaps of (BGa)P alloys (strained and unstrained) decrease with Boron content. Our experimental results suggest that the band gap of (BGa)P layers up to 6% Boron is large and suitable to be used as cladding and contact layers in GaP-based quantum well heterostructures on silicon substrates.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sweeney, Professor Stephen |
| Authors: | Hossain, N., Hosea, J., Liebich, S., Zimprich, M., Volz, K., Kunert, B., Stolz, W., and Sweeney, S.J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | AIP Conference Proceedings |
| ISSN: | 0094-243X |
| ISBN: | 9780735411944 |
| Related URLs: |
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