Hild, K., Batool, Z., Jin, S.R., Hossain, N., Marko, I.P., Hosea, T.J.C., Lu, X., Tiedje, T. and Sweeney, S.J. (2013) Auger Recombination Suppression and Band Alignment in GaAsBi/GaAs Heterostructures. In: 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich, Switzerland, 29 Jul–3 Aug 2012, pp. 488-489. ISBN 9780735411944 (doi: 10.1063/1.4848498)
Full text not currently available from Enlighten.
Publisher's URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84907364722&partnerID=MN8TOARS
Abstract
Using a combination of experimental and theoretical techniques we present the dependence of the bandgap Eg and the spin orbit splitting energy Δso, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which Δso,> Eg occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.
Item Type: | Conference Proceedings |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Hild, Dr Konstanze and Marko, Dr Igor and Sweeney, Professor Stephen |
Authors: | Hild, K., Batool, Z., Jin, S.R., Hossain, N., Marko, I.P., Hosea, T.J.C., Lu, X., Tiedje, T., and Sweeney, S.J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | AIP Conference Proceedings |
ISSN: | 0094-243X |
ISBN: | 9780735411944 |
Related URLs: |
University Staff: Request a correction | Enlighten Editors: Update this record