Auger Recombination Suppression and Band Alignment in GaAsBi/GaAs Heterostructures

Hild, K., Batool, Z., Jin, S.R., Hossain, N., Marko, I.P., Hosea, T.J.C., Lu, X., Tiedje, T. and Sweeney, S.J. (2013) Auger Recombination Suppression and Band Alignment in GaAsBi/GaAs Heterostructures. In: 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich, Switzerland, 29 Jul–3 Aug 2012, pp. 488-489. ISBN 9780735411944 (doi: 10.1063/1.4848498)

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Abstract

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap Eg and the spin orbit splitting energy Δso, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which Δso,> Eg occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hild, Dr Konstanze and Marko, Dr Igor and Sweeney, Professor Stephen
Authors: Hild, K., Batool, Z., Jin, S.R., Hossain, N., Marko, I.P., Hosea, T.J.C., Lu, X., Tiedje, T., and Sweeney, S.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:AIP Conference Proceedings
ISSN:0094-243X
ISBN:9780735411944
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