Sweeney, S.J. et al. (2014) Electrically Injected GaAsBi Quantum Well Lasers. In: 2014 International Semiconductor Laser Conference, Palma de Mallorca, Spain, 07-10 Sep 2014, pp. 80-81. ISBN 9781479957217 (doi: 10.1109/ISLC.2014.173)
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Abstract
GaAsBi QWs have the potential to remove inherent recombination losses thereby increasing the efficiency and reducing the temperature sensitivity of near-infrared telecommunications lasers. GaAsBi QW lasers are reported and prospects for 1550nm operation are discussed.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Hild, Dr Konstanze and Marko, Dr Igor and Sweeney, Professor Stephen |
| Authors: | Sweeney, S.J., Marko, I.P., Jin, S.R., Hild, K., Batool, Z., Ludewig, P., Natterman, L., Bushell, Z., Stolz, W., Volz, K., Broderick, C.A., Usman, M., Harnedy, P.E., Oreilly, E.P., Butkutė, R., Pačebutas, V., Geižutis, A., and Krotkus, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Conference Digest - IEEE International Semiconductor Laser Conference |
| ISSN: | 0899-9406 |
| ISBN: | 9781479957217 |
| Related URLs: |
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