Marko, I.P., Adams, A.R., Massé, N.F. and Sweeney, S.J. (2014) Effect of non-pinned carrier density above threshold in InAs quantum dot and quantum dash lasers. IET Optoelectronics, 8(2), pp. 88-93. (doi: 10.1049/iet-opt.2013.0055)
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Abstract
The impact of carrier density non-pinning above threshold on laser performance is studied in different quantum dot/dash lasers with room temperature emission wavelengths of 0.98–1.52 µm. Owing to inhomogeneity in the active region, the non-pinning may be important even above room temperature because of the non-thermal carrier distribution between the dots. This has a large impact on the external differential efficiency and the output power of the devices. In the presence of non-radiative recombination, non-pinning will further decrease the output power and the slope efficiency because of a significant reduction in the number of carriers available for stimulated emission.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marko, Dr Igor and Sweeney, Professor Stephen |
| Authors: | Marko, I.P., Adams, A.R., Massé, N.F., and Sweeney, S.J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IET Optoelectronics |
| Publisher: | Wiley for Institution of Engineering and Technology |
| ISSN: | 1751-8776 |
| ISSN (Online): | 1751-8776 |
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