Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

Chai, G.M.T., Hosea, T.J.C., Fox, N.E., Hild, K., Ikyo, A.B., Marko, I.P., Sweeney, S.J. , Bachmann, A., Arafin, S. and Amann, M.-C. (2014) Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance. Journal of Applied Physics, 115(1), 013102. (doi: 10.1063/1.4861146)

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Abstract

We report angle dependent and temperature dependent (9 K–300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 μm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 ± 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hild, Dr Konstanze and Marko, Dr Igor and Sweeney, Professor Stephen
Authors: Chai, G.M.T., Hosea, T.J.C., Fox, N.E., Hild, K., Ikyo, A.B., Marko, I.P., Sweeney, S.J., Bachmann, A., Arafin, S., and Amann, M.-C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979
ISSN (Online):1089-7550
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