Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers

Marko, I.P. et al. (2015) Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers. Semiconductor Science and Technology, 30, 094008. (doi: 10.1088/0268-1242/30/9/094008)

Abstract

A combined growth approach involving both molecular-beam epitaxy and metal-organic vapor phase epitaxy has been developed to fabricate GaAsBi/GaAs-based quantum well (QW) laser structures with a Bi composition up to 8%. Lasing operation has been demonstrated at room temperature at 1.06 μm in laser diodes containing 3QWs that in turn contain approximately 6% Bi. A 5QW device demonstrated lasing at 1.09 μm at 80 K. Using temperature- and pressure-dependent measurements of stimulated emission as well as pure spontaneous emission measurements, we show that the threshold current of the devices is limited by non-radiative defect-related recombination and an inhomogeneous carrier distribution. This is suspected to be due to inhomogeneity of the QW width as well as non-uniform Bi composition in the active region.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Hild, Dr Konstanze and Marko, Dr Igor and Sweeney, Professor Stephen
• Authors: Marko, I.P., Jin, S.R., Hild, K., Batool, Z., Bushell, Z.L., Ludewig, P., Stolz, W., Volz, K., Butkutė, R., Pačebutas, V., Geizutis, A., Krotkus, A., and Sweeney, S.J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Semiconductor Science and Technology
• Publisher: IOP Publishing
• ISSN: 0268-1242
• ISSN (Online): 1361-6641