Bismuth-based semiconductors for mid-infrared photonic devices

Sweeney, S.J. , Marko, I.P., Jin, S.R., Hild, K. and Batool, Z. (2015) Bismuth-based semiconductors for mid-infrared photonic devices. In: 2015 IEEE Summer Topicals Meeting Series (SUM), Nassau, Bahamas, 13-15 Jul 2015, pp. 181-182. ISBN 9781479974689 (doi: 10.1109/PHOSST.2015.7248257)

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Abstract

Owing to the versatile band-structure made possible through the introduction of bismuth in III-V systems, we discuss the potential to produce efficient emitters and detectors in the mid-infrared based upon conventional GaAs and InP substrates.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hild, Dr Konstanze and Marko, Dr Igor and Sweeney, Professor Stephen
Authors: Sweeney, S.J., Marko, I.P., Jin, S.R., Hild, K., and Batool, Z.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:2015 IEEE Summer Topicals Meeting Series, SUM 2015
ISSN:2376-8614
ISBN:9781479974689

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