Wavelength Dependence of Efficiency Limiting Mechanisms in Type I GaInAsSb/GaSb Lasers Emitting in the Mid-infrared

Eales, T., Marko, I. P., Ikyo, B. A., Adams, A. R., Arafin, S., Sprengel, S., Amann, M.-C. and Sweeney, S. J. (2016) Wavelength Dependence of Efficiency Limiting Mechanisms in Type I GaInAsSb/GaSb Lasers Emitting in the Mid-infrared. In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016, ISBN 9784885523069

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Abstract

Type-I GaInAsSb lasers, emitting between 2–3 µm are investigated using temperature and high pressure characterization techniques. A model of the Auger processes is used to fit the non-radiative component of the threshold current at room temperature, identifying the dominance of different Auger losses across the wavelength range of operation.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marko, Dr Igor and Sweeney, Professor Stephen
Authors: Eales, T., Marko, I. P., Ikyo, B. A., Adams, A. R., Arafin, S., Sprengel, S., Amann, M.-C., and Sweeney, S. J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Conference Digest - IEEE International Semiconductor Laser Conference
ISSN:1947-6981
ISBN:9784885523069
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