Optical Gain in GaAsBi/GaAs Quantum Well Diode Lasers

Marko, I. P., Broderick, C. A., Jin, S., Ludewig, P., Stolz, W., Volz, K., Rorison, J. M., O'Reilly, E. P. and Sweeney, S. J. (2016) Optical Gain in GaAsBi/GaAs Quantum Well Diode Lasers. In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016, ISBN 9784885523069

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Abstract

Optical gain, absorption and spontaneous emission spectra for GaAs 0.978 Bi 0.022 /GaAs laser diodes are measured experimentally and compared with theory. Internal optical losses of 10-15 cm -1 and peak modal gain of 24 cm -1 are measured at threshold. The results of calculations showed excellent agreement with the experiment, key for future laser design.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marko, Dr Igor and Sweeney, Professor Stephen
Authors: Marko, I. P., Broderick, C. A., Jin, S., Ludewig, P., Stolz, W., Volz, K., Rorison, J. M., O'Reilly, E. P., and Sweeney, S. J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Conference Digest - IEEE International Semiconductor Laser Conference
ISSN:1947-6981
ISBN:9784885523069
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