MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications

Nattermann, L. et al. (2016) MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications. Applied Materials Today, 5, pp. 209-214. (doi: 10.1016/j.apmt.2016.09.018)

Abstract

Dilute bismide Ga(PAsBi)-based structures are promising candidates for highly efficient optoelectronic applications, like the 1 eV sub-cell in multi-junction solar cells or the active region in infra-red laser diodes. The band gap can be tuned independently from the lattice constant, which theoretically enables the deposition of lattice-matched layers in a wide range of band gap energies on GaAs substrate. In this work, firstly, the shifts in the band edge positions as a function of composition that are possible with the Ga(PAs(Bi)) alloy were estimated using the virtual crystal approximation and valence band anti-crossing theory. Secondly, systematic investigations on MOVPE growth of Ga(PAsBi) layers are presented. Finally, we show the first photoluminescence activity of quaternary Ga(PAsBi) and compare the experimental results to theory.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Hild, Dr Konstanze and Sweeney, Professor Stephen
• Authors: Nattermann, L., Ludewig, P., Knaub, N., Rosemann, N.W., Hepp, T., Sterzer, E., Jin, S.R., Hild, K., Chatterjee, S., Sweeney, S.J., Stolz, W., and Volz, K.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Applied Materials Today
• Publisher: Elsevier
• ISSN: 2352-9407
• ISSN (Online): 2352-9415