GaAs-based Dilute Bismide Semiconductor Lasers: Theory Vs. Experiment

Broderick, C. A., Rorison, J. M., Marko, I. P., Sweeney, S. J. and O'Reilly, E. P. (2016) GaAs-based Dilute Bismide Semiconductor Lasers: Theory Vs. Experiment. In: 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Sydney, NSW, Australia, 11-15 Jul 2016, pp. 209-210. ISBN 9781467386036 (doi: 10.1109/NUSOD.2016.7546999)

Abstract

We present a theoretical analysis of the electronic and optical properties of near-infrared dilute bismide quantum well (QW) lasers grown on GaAs substrates. Our theoretical model is based upon a 12-band k·p Hamiltonian which explicitly incorporates the strong Bi-induced modifications of the band structure in pseudomorphically strained GaBi x As 1-x alloys. We outline the impact of Bi on the gain characteristics of ideal GaBi x As 1-x /(Al)GaAs devices, compare the results of our theoretical calculations to experimental measurements of the spontaneous emission (SE) and optical gain - a first for this emerging material system - and demonstrate quantitative agreement between theory and experiment. Through our theoretical analysis we further demonstrate that this novel class of III-V semiconductor alloys has strong potential for the development of highly efficient GaAs-based semiconductor lasers which promise to deliver uncooled operation at 1.55 μm.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marko, Dr Igor and Sweeney, Professor Stephen
• Authors: Broderick, C. A., Rorison, J. M., Marko, I. P., Sweeney, S. J., and O'Reilly, E. P.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016
• ISSN: 2158-3242
• ISBN: 9781467386036