1.55-µm sidewall grating DFB lasers integrated with a waveguide crossing for an optical beam forming network

Ye, S. et al. (2023) 1.55-µm sidewall grating DFB lasers integrated with a waveguide crossing for an optical beam forming network. IEEE Photonics Technology Letters, 35(14), pp. 785-788. (doi: 10.1109/LPT.2023.3278880)

Abstract

By using asymmetric twin-waveguide technology, a 1.55-μm sidewall grating distributed feedback laser monolithically integrated with a passive waveguide crossing was for the first time demonstrated for an optical beam forming network, which needs only one metalorganic vapor-phase epitaxy step. The distributed feedback laser with uncoated facets presents a side-mode suppression ratio of >44 dB and a low 3-dB linewidth of 68 kHz. An elliptical parabolic taper waveguide crossing had a theoretical crosstalk suppression ratio of 40 dB, while the measured cross-talk suppression ratio was at least 20 dB.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Watson, Dr Scott and Marsh, Professor John and Sun, Xiao and Yuan, Bocheng and Kelly, Professor Anthony and Hou, Dr Lianping and Ye, Dr Shengwei and Read, Peter and Maidment, Pierre
• Authors: Ye, S., Sun, X., Yuan, B., Read, P., Maidment, P., Huang, Y., Zhang, R., Watson, S., Kelly, A., Marsh, J. H., and Hou, L.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Photonics Technology Letters
• Publisher: IEEE
• ISSN: 1041-1135
• ISSN (Online): 1941-0174
• Published Online: 22 May 2023
• Copyright Holders: Copyright © 2023 IEEE
• First Published: First published in IEEE Photonics Technology Letters 35(14):785 - 788
• Publisher Policy: Reproduced with the permission of the Publisher

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
302617		Optically controlled THz phased array antennas	John Marsh	Engineering and Physical Sciences Research Council (EPSRC)	EP/R042578/1	ENG - Electronics & Nanoscale Engineering