Marczewski, J., Zachau, M., Asenov, A., Koch, F. and Gruetzmacher, D. (1992) A diode device combining lateral field-effect transport and vertical tunneling in a multi-quantum-well heterostructure. IEEE Electron Device Letters, 13(6), pp. 338-340. (doi: 10.1109/55.145077)
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Publisher's URL: http://dx.doi.org/10.1109/55.145077
Abstract
The authors discuss an electronic device with asymmetric contacts to a InGaAs-InP multilayer heterostructure. Current enters via an alloyed ohmic contact into the quantum wells (QWs) and flows laterally along capacitively coupled channels. It leaves via tunneling between the layers and through a forward-biased surface Schottky contact. A step-like I-V dependence is observed and interpreted by a model calculation.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen |
Authors: | Marczewski, J., Zachau, M., Asenov, A., Koch, F., and Gruetzmacher, D. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Device Modelling Group |
Journal Name: | IEEE Electron Device Letters |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0741-3106 |
ISSN (Online): | 1558-0563 |
Copyright Holders: | Copyright © 1992 Institute of Electrical and Electronics Engineers |
First Published: | First published in IEEE Electron Device Letters 13(6):338-340 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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