The 'gated-diode' configuration in MOSFET's, a sensitive tool for characterizing hot-carrier degradation

Speckbacher, P., Berger, J., Asenov, A., Koch, D. and Weber, W. (1995) The 'gated-diode' configuration in MOSFET's, a sensitive tool for characterizing hot-carrier degradation. IEEE Transactions on Electron Devices, 42(7), pp. 1287-1296. (doi: 10.1109/16.391211)

Abstract

This paper describes a new measurement technique, the forward gated-diode current characterized at low drain voltages to be applied in MOSFET's for investigating hot-carrier stress-induced defects at high spatial resolution. The generation/recombination current in the drain-to-substrate diode as a function of gate voltage, combined with two-dimensional numerical simulation, provides a sensitive tool for detecting the spatial distribution and density of interface defects. In the case of strong accumulation, additional information is obtained from interband tunneling processes occurring via interface defects. The various mechanisms for generating interface defects and fixed charges at variable stress conditions are discussed, showing that information complementary to that available from other methods is obtained

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen
• Authors: Speckbacher, P., Berger, J., Asenov, A., Koch, D., and Weber, W.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Journal Name: IEEE Transactions on Electron Devices
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 0018-9383
• Copyright Holders: Copyright © 1995 Institute of Electrical and Electronics Engineers
• First Published: First published in IEEE Transactions on Electron Devices 42(7):1287-1296
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher