Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs

Cameron, N.I., Murad, S., McLelland, H., Asenov, A., Taylor, M.R.S., Holland, M.C. and Beaumont, S.P. (1996) Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs. Electronics Letters, 32(8), pp. 770-772.

Abstract

The authors report how the performance of 0.12 μm GaAs pHEMTs is improved by controlling both the gate recess width, using selective dry etching, and the gate position in the source drain gap, using electron beam lithography. pHEMTs with a transconductance of 600 mS/mm, off state breakdown voltages >2 V, fτ of 120 GHz, f max of 180 GHz and MAG of 13.5 dB at 60 GHz are reported.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Beaumont, Professor Steve and Asenov, Professor Asen
• Authors: Cameron, N.I., Murad, S., McLelland, H., Asenov, A., Taylor, M.R.S., Holland, M.C., and Beaumont, S.P.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Journal Name: Electronics Letters
• Publisher: The Institution of Engineering & Technology
• ISSN: 0013-5194
• ISSN (Online): 1350-911X
• Copyright Holders: Copyright © 1996 Institute of Electrical and Electronics Engineers
• First Published: First published in Electronics Letters 32(8):770-772
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher