Speed limitations of resonant tunneling diode-based photodetectors

Alomari, S., Al-Taai, Q. , Elksne, M. , Al-Khalidi, A. , Wasige, E. and Figueiredo, J. (2023) Speed limitations of resonant tunneling diode-based photodetectors. Optics Express, 31(11), pp. 18300-18317. (doi: 10.1364/OE.486701)

Abstract

In this work, we study multiple epitaxial layer structures incorporating a resonant tunneling diode photodetector utilizing the In0.53Ga0.47As/InP material system for operation at the near-infrared region of 1.55 and 1.31 micrometers. We study the photodetection speed of response for these devices and the physical limitations affecting their bandwidth. We show that resonant tunneling diode-based photodetectors have bandwidth limitations due to the charge accumulation near the barriers and report on an operating bandwidth reaching up to 1.75 GHz in particular structures, which is the highest number reported for such detectors to the authors’ best knowledge.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Wasige, Professor Edward and Al-Taai, Dr Qusay and Elksne, Mrs Maira and Al-Khalidi, Dr Abdullah
• Authors: Alomari, S., Al-Taai, Q., Elksne, M., Al-Khalidi, A., Wasige, E., and Figueiredo, J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Optics Express
• Publisher: Optical Society of America
• ISSN: 1094-4087
• ISSN (Online): 1094-4087
• Published Online: 16 May 2023
• Copyright Holders: Copyright © 2023 Optica Publishing Group
• First Published: First published in Optics Express 31(11): 18300-18317
• Publisher Policy: Reproduced in accordance with the publisher copyright policy

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
303977		ChipAI	Edward Wasige	European Commission (EC)	828841	ENG - Electronics & Nanoscale Engineering