Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness

Asenov, A., Kaya, S. and Brown, A.R. (2003) Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness. IEEE Transactions on Electron Devices, 50(5), pp. 1254-1260. (doi:10.1109/TED.2003.813457)

[img]
Preview
Text
intrinsic_para_fluct.pdf

598kB

Publisher's URL: http://dx.doi.org/10.1109/TED.2003.813457

Abstract

In this paper, we use statistical three-dimensional (3-D) simulations to study the impact of the gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep decananometer (sub 50 nm) gate MOSFETs. The line edge roughness is introduced using a Fourier synthesis technique based on the power spectrum of a Gaussian autocorrelation function. In carefully designed simulation experiments, we investigate the impact of the rms amplitude /spl Delta/ and the correlation length /spl Lambda/ on the intrinsic parameter fluctuations in well scaled, but simple devices with fixed geometry as well as the channel length and width dependence of the fluctuations at fixed LER parameters. For the first time, we superimpose in the simulations LER and random discrete dopants and investigate their relative contribution to the intrinsic parameter fluctuations in the investigated devices. For particular MOSFET geometries, we were able to identify the regions where each of these two sources of intrinsic parameter fluctuations dominates.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen
Authors: Asenov, A., Kaya, S., and Brown, A.R.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
Copyright Holders:Copyright © 2003 Institute of Electrical and Electronics Engineers
First Published:First published in IEEE Transactions on Electron Devices 50(5):1254-1260
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

University Staff: Request a correction | Enlighten Editors: Update this record