Asenov, A., Kaya, S. and Brown, A.R. (2003) Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness. IEEE Transactions on Electron Devices, 50(5), pp. 1254-1260. (doi: 10.1109/TED.2003.813457)
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Publisher's URL: http://dx.doi.org/10.1109/TED.2003.813457
Abstract
In this paper, we use statistical three-dimensional (3-D) simulations to study the impact of the gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep decananometer (sub 50 nm) gate MOSFETs. The line edge roughness is introduced using a Fourier synthesis technique based on the power spectrum of a Gaussian autocorrelation function. In carefully designed simulation experiments, we investigate the impact of the rms amplitude /spl Delta/ and the correlation length /spl Lambda/ on the intrinsic parameter fluctuations in well scaled, but simple devices with fixed geometry as well as the channel length and width dependence of the fluctuations at fixed LER parameters. For the first time, we superimpose in the simulations LER and random discrete dopants and investigate their relative contribution to the intrinsic parameter fluctuations in the investigated devices. For particular MOSFET geometries, we were able to identify the regions where each of these two sources of intrinsic parameter fluctuations dominates.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen |
Authors: | Asenov, A., Kaya, S., and Brown, A.R. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Device Modelling Group |
Journal Name: | IEEE Transactions on Electron Devices |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0018-9383 |
Copyright Holders: | Copyright © 2003 Institute of Electrical and Electronics Engineers |
First Published: | First published in IEEE Transactions on Electron Devices 50(5):1254-1260 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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