Ferroelectric switching mechanism in SrBi2Ta2O9

Ding, Y., Liu, J.S., MacLaren, I. and Wang, Y.N. (2001) Ferroelectric switching mechanism in SrBi2Ta2O9. Applied Physics Letters, 79(7), pp. 1015-1017. (doi: 10.1063/1.1395522)

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The ferroelectric switching mechanism in strontium bismuth tantalate [SrBi2Ta2O9[SrBi2Ta2O9 (SBT)] has been studied using in situ transmission electron microscopy observations of the nucleation and growth of polarization domains, such as 180° and 90° domains. Thank to this high density of the antiphase boundary (APB), a switching mechanism in SBT based on the nucleation of new polarization domains at APBs as well as the electrode interfaces put forward and the fatigue-free behavior of SBT with a platinum electrode is explained.

Item Type:Articles
Glasgow Author(s) Enlighten ID:MacLaren, Dr Ian
Authors: Ding, Y., Liu, J.S., MacLaren, I., and Wang, Y.N.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN (Online):1077-3118
Published Online:01 August 2001

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