DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall

Dhongde, A., Taking, S., Ofiare, A., Karami, K. , Elksne, M., Dwidar, M., Al-Khalidi, A. and Wasige, E. (2022) DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall. In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022, (Accepted for Publication)

Abstract

No abstract available.

• Item Type: Conference Proceedings
• Status: Accepted for Publication
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Wasige, Professor Edward and Dwidar, Mahmud and Elksne, Mrs Maira and Ofiare, Dr Afesomeh and Dhongde, Aniket and Al-Khalidi, Dr Abdullah and Karami, Dr Kaivan and Taking, Dr Sanna
• Authors: Dhongde, A., Taking, S., Ofiare, A., Karami, K., Elksne, M., Dwidar, M., Al-Khalidi, A., and Wasige, E.
• College/School: College of Science and Engineering > School of Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
301178		Novel GaN Power Devices and Packaging Technologies for 300 degC Ambient Operation	Edward Wasige	Engineering and Physical Sciences Research Council (EPSRC)	EP/R024413/1	ENG - Electronics & Nanoscale Engineering