Design and investigation of charge-plasma-based work function engineered dual-metal-heterogeneous gate Si-Si0.55Ge0.45 GAA-cylindrical NWTFET for ambipolar analysis

Kumar, N. and Raman, A. (2019) Design and investigation of charge-plasma-based work function engineered dual-metal-heterogeneous gate Si-Si0.55Ge0.45 GAA-cylindrical NWTFET for ambipolar analysis. IEEE Transactions on Electron Devices, 66(3), pp. 1468-1474. (doi: 10.1109/TED.2019.2893224)

Abstract

In this paper, we have proposed dopingless gate all around (GAA) nanowire tunnel field-effect transistor (NWTFET) made up of dual-material channel (DMaC). Charge-plasma (CP) technique is used to induce the doping concentration of charge carriers in the intrinsic semiconductor. GAA structure uses zirconium silicate (IV) (ZrSiO 4 )/silicon dioxide (SiO 2 ) for heterogeneous gate (HG) structure metalized with two different gate metals. Auxiliary gate (GM1) and tunneling gate (GM2) have different work functions, i.e., φ 1 and φ 2 . The device physics is analyzed using electric field, charge carrier concentration, energy-band diagram, and tunneling rate across the structure. The effect of variation in φ 1 and φ 2 helps in the analysis of the ambipolar and analog behavior of the proposed device CP-dual metal-HG-DMaC-NWTFET. The reported ON-state current is 5.54 μA/μm, and the OFF-state current is approximately 0.1 aA/μm. The proposed device showed negligible ambipolar current (10 -19 A/μm) as negative bias increases to V GS = -0.8 V making the device compatible for low-voltage applications.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Kumar, Dr Naveen
• Authors: Kumar, N., and Raman, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Transactions on Electron Devices
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 0018-9383
• ISSN (Online): 1557-9646