Design and performance analysis of core-shell dual metal-dual gate cylindrical GAA silicon nanotube-TFET

Mushtaq, U., Kumar, N. , Anand, S. and Amin, I. (2019) Design and performance analysis of core-shell dual metal-dual gate cylindrical GAA silicon nanotube-TFET. Silicon, 12(10), pp. 2355-2363. (doi: 10.1007/s12633-019-00329-9)

Abstract

For experiencing phenomenon at nanoscale regimes, Nanotube FETs have been explored quite attentively due to their ever-increasing application in low power electronics. Nanotubes have a unique property of forming a Gate All around configuration, which imparts the device with appropriate electrostatic control and at the same time providing it with a superior exemption from short channel effects. In this letter, we have proposed a Hetero Metal (HM)-Dual Gate (DG) All around Core-Shell (CS) Nanotube (NT) TFET. Different metal work functions for both the core and shell gates have been employed and compared the proposed device with a Single Metal Gate All around configuration. The HM-DG NT-TFET yielded better analog and RF characteristics like better ION (2.68X10−6A/μm), improved ION/IOFF (4.66X1012) and Subthreshold slope (19 mV/dec). The proposed device showed almost identical Cgg when compared to the Single Metal (SM) NT-TFET although transconductance (gm) and unity gain frequency (fT) were found to be far better than Single-Metal GAA Configuration that indicates towards the device being a propitious candidate in RF circuits. The devices were also compared based on linear parameters for which the proposed device exhibited superior results.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Kumar, Dr Naveen
• Authors: Mushtaq, U., Kumar, N., Anand, S., and Amin, I.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Silicon
• Publisher: Springer
• ISSN: 1876-990X
• ISSN (Online): 1876-9918