Design and analysis of IGZO based junctionless thin film transistor using SOI technology

Prakash Singh, R., Khosla, M., Saini, I. and Kumar, N. (2020) Design and analysis of IGZO based junctionless thin film transistor using SOI technology. Silicon, 13, pp. 2309-2318. (doi: 10.1007/s12633-020-00803-9)

Abstract

In this paper, IGZO based Junctionless Thin Film Transistor (IGZO JLTFT) using SOI technology is proposed with a channel length of 20 nm. The article also demonstrates a comparative analysis of amorphous Silicon-based JLTFT and artificial material IGZO based JLTFT using the Silvaco Atlas tool. Based upon the Junctionless properties, the compound, and high bandgap material, Indium Gallium Zinc Oxide (IGZO) is used to overcome the Short Channel Effects (SCEs) caused due to continuous miniaturization of the channel size. Optimization of the proposed SOI based IGZO JLTFT device has been carried out, by varying the Buried oxide and gate oxide materials and their thicknesses, and HFO2 has been demonstrated to give the best Ion/Ioff ratio. Further, gate metal work-function engineering is employed to enhance the performance of the proposed device in terms of increasing on-state current, and reducing off-state current. Through rigorous simulations with variations in different device parameters, it is demonstrated that the 20 nm IGZO JLTFT with HfO2 as Buried and Gate oxides, and work functions of 4.8 eV each for both metal gates, provides the best performance such as: Ioff of 9.97*10−12 A, threshold voltage of 0.38 V, overall gate capacitances of 1.13*10−15 F, and Subthreshold Slope (SS) of 93 mV/dec.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Kumar, Dr Naveen
• Authors: Prakash Singh, R., Khosla, M., Saini, I., and Kumar, N.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Silicon
• Publisher: Springer
• ISSN: 1876-990X
• ISSN (Online): 1876-9918