singh, A., Sajad, M., Singh, A., Kumar, N. , Amin, S. I. and Anand, S. (2021) Design and analysis of negative capacitance based dual material dopingless tunnel FET. Superlattices and Microstructures, 156, 106964. (doi: 10.1016/j.spmi.2021.106964)
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Abstract
In this paper, ferroelectric material based Dual Material Gate-Doping Less Tunnel Field Effect Transistor (DMG-DLTFET) is designed using gate stacked PZT to induce negative capacitance (NC) in the device and analyzed for various device parameters namely trans-conductance (gm), drain current (Id), subthreshold slope (SS), threshold voltage (VTH) and Total capacitance (CT). Simulated parameters are compared with conventional DMG-DLTFET and it has been found that NC based DMG-DLTFET gives better results. Furthermore, NC reduces the SS resulting in fast switching and hence low power consumption. The effect of thickness of the dielectric material PZT is presented which plays vital role in deciding negative capacitance in device.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Kumar, Dr Naveen |
| Authors: | singh, A., Sajad, M., Singh, A., Kumar, N., Amin, S. I., and Anand, S. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Superlattices and Microstructures |
| Publisher: | Elsevier |
| ISSN: | 0749-6036 |
| ISSN (Online): | 1096-3677 |
| Published Online: | 19 June 2021 |
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