Design and parametric variation assessment of dopingless nanotube field-effect transistor (DL-NT-FET) for high performance

Singh, J., Chakraborty, D. and Kumar, N. (2021) Design and parametric variation assessment of dopingless nanotube field-effect transistor (DL-NT-FET) for high performance. Silicon, 14(8), pp. 4097-4105. (doi: 10.1007/s12633-021-01182-5)

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In this paper, a dopingless nanotube field-effect transistor (DL-NT-FET) has been proposed and its performance analysis is carried out by eliminating doping, which is brought in by the application of the charge-plasma technique. A comparative examination of transfer characteristics, transconductance (gm), gate capacitances (Cgs, Cgd), output characteristics, output conductance gds, and various performance parameters are investigated by varying the channel length, radius, gate work function, and temperature. Results revealed that increasing the channel length improves subthreshold slope with greater ION/IOFF and less threshold voltage. It has been also noticed that increase in the radius of the nanotube or an increase in temperature results in just the opposite effect of that observed in the case of increasing channel length. The IOFF value increases significantly on increasing the temperature while the small degradation in the ION has been noticed as a result of mobility degradation and velocity saturation. The output conductance gds also degrades on increasing the temperature. A proliferation of 39 % is observed in the Cgs at the VGS of 0.45 V on increasing the channel length from 20 nm to 35 m whereas no significant changes are observed in the Cgd for the same increment in the channel length.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Kumar, Dr Naveen
Authors: Singh, J., Chakraborty, D., and Kumar, N.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Silicon
ISSN (Online):1876-9918
Published Online:14 June 2021

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