Bharadwaj, H., Kumar, N. , Amin, S. I. and Anand, S. (2022) Charge plasma based vertical nanowire tunnel field effect transistor: design and sensitivity analysis for biosensing application. Silicon, 14, pp. 7677-7684. (doi: 10.1007/s12633-021-01512-7)
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Abstract
The device Dopingless Vertical Nanowire Tunnel Field Effect Transistor is simulated as a biosensor in this paper. The technique used is Charge Plasma for general doping in this device. Over the silicon surface, the work function of Platinum metal is 5.93 eV and Polysilicon metal of work function 4.2 eV is used to create the source region and the gate region, respectively. To scrutinize the device for biosensing applications, three distinct biomolecules with differing dielectric constants, streptavidin (k = 2.1), 3- aminopropyltriethoxysilane (k = 3.57), and protein (k = 8) are induced in the cavity. The performance of a biosensor is evaluated using both charged and neutral biomolecules. Sensing parameters of biosensor such as ON-state current, subthreshold slope, and ION/IOFF ratio, are used to examine the sensitivity of biosensor for different biomolecules. The simulation results show that the larger the dielectric constant, the lower the SS, the more positively charged, and the greater the sensitivity of the biosensor lead to significantly having higher performance.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Kumar, Dr Naveen |
| Authors: | Bharadwaj, H., Kumar, N., Amin, S. I., and Anand, S. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Silicon |
| Publisher: | Springer |
| ISSN: | 1876-990X |
| ISSN (Online): | 1876-9918 |
| Published Online: | 10 November 2021 |
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