Gate all around dopingless nanotube TFET biosensor with Si0.5Ge0.5 - based source

Wighmal, K., Peddi, G., Apoorva, , Kumar, N. , Amin, S. I. and Anand, S. (2022) Gate all around dopingless nanotube TFET biosensor with Si0.5Ge0.5 - based source. Silicon, 14(11), pp. 5951-5959. (doi: 10.1007/s12633-021-01361-4)

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Through this paper, we discuss how Tunnel Field Effect Transistors can be utilized for the detection of biomaterials hence acting as a biosensor. The device proposed is a 3-D Doping less Nanotube Tunnel Field Effect Transistor (DL-NT-TFET) device with a wrap-around gate or a Gate all around to provide maximum control over the charge carriers as surface control increases. The source (p+) and drain (n+) are shaped by utilizing Charge Plasma Technique in which Hafnium metal with work 3.9ev is utilized at the drain side and Platinum metal with work function 5.93 eV is utilized at the source side. This technique is used for simplification in the fabrication as there is no requirement for Doping. For introducing Biomaterial, a cavity is introduced under the gate at the source side. Different dielectric values ranging from k = 1, 2.9, 3.57 ,5,8,12,16,20 is analysed to study the variation in parameters like ID -VGS characteristics, subthreshold slope, electric field, carrier concentration etc. as a part of the results. The objective of our work is to propose a device with the least difficulty in fabrication and improved characteristics like high Ion, low subthreshold slope, high Ion/I off ratio etc.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Kumar, Dr Naveen
Authors: Wighmal, K., Peddi, G., Apoorva, , Kumar, N., Amin, S. I., and Anand, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Silicon
ISSN (Online):1876-9918
Published Online:13 September 2021

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