Design and analysis of dopingless charge-plasma-based ring architecture of tunnel field-effect transistor for low-power application

Gupta, A. K., Raman, A., Kumar, N. , Shekhar, D. and Kumar, P. (2022) Design and analysis of dopingless charge-plasma-based ring architecture of tunnel field-effect transistor for low-power application. In: Raman, A., Shekhar, D. and Kumar, N. (eds.) Sub-Micron Semiconductor Devices: Design and Applications. CRC Press: Boca Raton. ISBN 9780367648091 (doi: 10.1201/9781003126393-15)

Abstract

This chapter discusses the dopingless charge-plasma-based ring architecture of the tunnel field-effect transistor (CP-Ring-TFET). The operation of the TFET has been described in this chapter. The two- and three-dimensional structures of the CP-Ring-TFET with device specification are also described. For a simulation of the device, the Silvaco technology computer-aided design (TCAD) tool is used. This chapter also covers the methodology, device specification, and model specification used in the simulation of the CP-Ring-TFET device. The proposed CP-Ring-TFET device is a dopingless device and CP technique is used to operate the proposed device in the equilibrium operating region, OFF operating region, and ON operating region. For the performance analysis of the CP-Ring-TFET device, various parameters are examined like device and analog specification. The proposed CP-Ring-TFET structure shows the higher ON-state current (ION ), better subthreshold slope (SS), and lower threshold voltage (VTH ), which is beneficial for low-power applications.

• Item Type: Book Sections
• Status: Published
• Glasgow Author(s) Enlighten ID: Kumar, Dr Naveen
• Authors: Gupta, A. K., Raman, A., Kumar, N., Shekhar, D., and Kumar, P.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Publisher: CRC Press
• ISBN: 9780367648091
• Published Online: 11 May 2022

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