Deriving a novel methodology for nano-BioFETs and analysing the effect of high-k oxides on the amino-acids sensing application

Dhar, R., Kumar, N. , Garcia, C. P. and Georgiev, V. (2023) Deriving a novel methodology for nano-BioFETs and analysing the effect of high-k oxides on the amino-acids sensing application. Solid-State Electronics, 200, 108525. (doi: 10.1016/j.sse.2022.108525)

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In this paper, we present simulation results of a BioFET using methodology based on the Gouy-Chapman-Stern and the Site-binding models. The derived simulation approach is used to sense different amino acids, such as Arginine (R), Aspartic Acid (D) and Proline (P), functionalized with the help of a linker connected to the gate-oxide. The performance of the BioFETs is optimized while analyzing the effect of high-k dielectrics as the gate oxide. In general, the channel oxides are responsible for tuning the parameters such as sensitivity, surface potential and intrinsic buffer capacity. The variation of total surface capacitance, the second derivative of drain current and surface potential are used to uniquely identify the signatures of different amino acids. The proposed method can be helpful in defining an efficient method for label-free protein sequencing.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Dhar, Ms Rakshita Pritam and Kumar, Dr Naveen and Georgiev, Professor Vihar
Authors: Dhar, R., Kumar, N., Garcia, C. P., and Georgiev, V.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Solid-State Electronics
ISSN (Online):1879-2405
Published Online:14 November 2022
Copyright Holders:Copyright © 2022 The Authors
First Published:First published in Solid-State Electronics 200: 108525
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
305900Electrochemically-enabled high-throughput peptidomics for next-generation precision medicineVihar GeorgievEuropean Commission (EC)862539ENG - Electronics & Nanoscale Engineering