Junctionless silicon nanotube tunnel field effect transistor based resistive temperature detector

Okte, L., Raman, A., Raj, B. and Kumar, N. (2022) Junctionless silicon nanotube tunnel field effect transistor based resistive temperature detector. Silicon, 14, pp. 3281-3291. (doi: 10.1007/s12633-021-01102-7)

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A Junctionless Nanotube Tunnel Field Effect Transistor (JL-SiNT TFET) with platinum source and the aluminium gate electrode to enable band-to-band tunneling is proposed in this paper for significantly improved performance which is further used as an application of platinum resistive temperature detector according to earth’s environmental needs. The optimized device has been compared with the conventional Core-Shell Nanotube structure in view of analog parameters and electrical properties. High Ion/Ioff current ratio in the range of ~103, low subthreshold slopes, and high Ion current results in view of band-to-band tunneling induced in the device. Furthermore, we demonstrate that variations in the gate electrode work function, oxide thickness and silicon thickness can be used as design parameters to further upgrade the performance of the JL-SiNT TFET. The investigations showed that ON resistance of the sensor decreases in approximately by 2.3 times as the temperature increases from -200 °C to 200 °C. The resistance-temperature relationship shows high operability, high sensitivity, and the simulation is incongruent with the experimental results. The Nano Resistive temperature detector shows a sensitivity of −0.45%.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Kumar, Dr Naveen
Authors: Okte, L., Raman, A., Raj, B., and Kumar, N.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Silicon
ISSN (Online):1876-9918
Published Online:16 April 2021

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