Device and circuit level assessment of negative capacitance TFETs for low-power high-performance digital circuits

Shoaib, M., Amin, S. I., Kumar, N. , Anand, S., Chunn, A. and Alam, M. S. (2022) Device and circuit level assessment of negative capacitance TFETs for low-power high-performance digital circuits. ECS Journal of Solid State Science and Technology, 11(5), 053011. (doi: 10.1149/2162-8777/ac6d76)

Abstract

In this paper, we propose and analyse the performance of negative capacitance tunnel field-effect-transistors (NC-TFETs) at device and circuit level. We design and simulate four NC-TFETs, two are Silicon based “Si NC N-TFET,” “Si NC P-TFET” and two are Heterojunction Silicon-Germanium source based “SiGe NC N-TFET,” “SiGe NC P-TFET.” The effect of NC is incorporated with 5 nm thick layer of ferroelectric Hafnium Zirconium Oxide HfZrO2 (FE-HZO) in gate stack of TFETs by using of LandauKhalatnikov (L-K) equations in MATLAB. The results show that at reduced NC gate voltage, the ON current (ION), On to OFF current (ION/IOFF) in NC devices is enhanced by ∼100%, while ∼50% reduction in the threshold voltage (VTH) and Average subthreshold slope (SSAV) is observed. The SiGe NC-TFETs showed the best response with maximum ION ∼ μ − 10 5 A m range, ION/IOFF ratio of ∼10 , 11 lowest SS ∼ − 25mv decade ,1 as compare to Si NC-TFETs. The circuit transient analysis is done using the Verilog-A model based on look-up table (LUT) approach. The propagation delay of NC NAND circuits is reduced ∼90%, the SiGe NC-TFETs based circuits showing the smallest propagation delay and fast transient characteristics. This paper also demonstrates that the impact of FE-HZO thickness (TFE) on the device-circuit characteristics.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Kumar, Dr Naveen
• Authors: Shoaib, M., Amin, S. I., Kumar, N., Anand, S., Chunn, A., and Alam, M. S.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: ECS Journal of Solid State Science and Technology
• Publisher: Electrochemical Society
• ISSN: 2162-8769
• ISSN (Online): 2162-8777
• Published Online: 19 May 2022