Large-area 2D selective area growth for photonic crystal surface emitting lasers

Zhao, X., McKenzie, A. , Munro, C. W., Hill, K. J., Kim, D. , Bayliss, S. L. , Gerrard, N. D., MacLaren, D. A. and Hogg, R. A. (2023) Large-area 2D selective area growth for photonic crystal surface emitting lasers. Journal of Crystal Growth, 603, 127036. (doi: 10.1016/j.jcrysgro.2022.127036)

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Abstract

We report an investigation into large-area selective area growth of InGaAs/GaAs quantum wells by metalorganic vapour phase epitaxy. The emission wavelength tuning range, growth enhancement, and uniformity of material deposited within square masked regions with central square growth windows with widths in the range of 100–300 μm are studied. Micro-photoluminescence measurements at the centre point of each of the growth windows reveals a total wavelength tuning range of 86 nm across all samples, with a typical tuning range of 30 nm for a given window width, dependent upon dielectric mask width. The thickness enhancement in each of features, as determined by white-light interferometric profiling, indicates that centre point growth rate enhancements of between 1.19 and 2.23× are achieved with respect to the nominal epitaxial structure. By comparing the observed emission wavelengths with those simulated using the enhanced quantum well thicknesses, a range of indium concentrations between 12 and 17 % is calculated for the material at the centre of each feature. Two-dimensional analysis of selected features reveals that areas with uniform emission wavelength up to 100 × 100 μm2 in size can be achieved for the mask patterns used, indicating suitability for future applications in the fabrication of monolithically integrated multi-wavelength photonic crystal surface emitting laser arrays.

Item Type:Articles
Additional Information:A.F.M. is grateful for the support of the Royal Commission for the Exhibition of 1851 through an Industrial Fellowship.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Bayliss, Dr Sam and Munro, Connor and Zhao, Xingyu and Hogg, Professor Richard and McKenzie, Mr Adam and Kim, Dr Daehyun and Gerrard, Dr Neil and MacLaren, Dr Donald
Creator Roles:
Zhao, X.Conceptualization, Methodology, Formal analysis, Investigation
McKenzie, A.Conceptualization, Methodology, Formal analysis, Investigation, Writing – original draft, Writing – review and editing
Munro, C.Investigation
Kim, D.Investigation
Bayliss, S.Investigation
Gerrard, N.Methodology, Investigation
MacLaren, D.Writing – review and editing, Supervision
Hogg, R.Conceptualization, Resources, Writing – review and editing, Supervision
Authors: Zhao, X., McKenzie, A., Munro, C. W., Hill, K. J., Kim, D., Bayliss, S. L., Gerrard, N. D., MacLaren, D. A., and Hogg, R. A.
College/School:College of Science and Engineering
College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Crystal Growth
Publisher:Elsevier
ISSN:0022-0248
ISSN (Online):1873-5002
Published Online:13 December 2022
Copyright Holders:Copyright © 2022 The Authors
First Published:First published in Journal of Crystal Growth 603:127036
Publisher Policy:Reproduced under a Creative Commons License

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