Mechanical dissipation in silicon flexures

Reid, S., Cagnoli, G., Crooks, D.R.M., Hough, J., Murray, P. , Rowan, S., Fejer, M.M., Route, R. and Zappe, S. (2006) Mechanical dissipation in silicon flexures. Physics Letters A, 351, pp. 205-211. (doi: 10.1016/j.physleta.2005.10.103)

Abstract

The thermo-mechanical properties of silicon make it of significant interest as a possible material for mirror substrates and suspension elements for future long-baseline gravitational wave detectors. The mechanical dissipation in 92 μm thick 〈110〉 single-crystal silicon cantilevers has been observed over the temperature range 85 K to 300 K, with dissipation approaching levels down to ϕ=4.4×10−7.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Cagnoli, Dr Gianpietro and Rowan, Professor Sheila and Crooks, Dr David and Hough, Professor James and Murray, Dr Peter and Reid, Professor Stuart
• Authors: Reid, S., Cagnoli, G., Crooks, D.R.M., Hough, J., Murray, P., Rowan, S., Fejer, M.M., Route, R., and Zappe, S.
• College/School: College of Science and Engineering > School of Physics and Astronomy
• Research Centre: College of Science and Engineering > School of Physics and Astronomy > Institute for Gravitational Research
• Journal Name: Physics Letters A
• Publisher: Elsevier BV
• ISSN: 0375-9601
• ISSN (Online): 1873-2429
• Published Online: 08 November 2005