Growth of nonpolar a-plane AlGaN epilayer on Al-composition graded-AlGaN buffer layer and characterization of its surface morphology and crystalline quality

Nasir, A., Xu, B., Ali, I. and Akbar, J. (2022) Growth of nonpolar a-plane AlGaN epilayer on Al-composition graded-AlGaN buffer layer and characterization of its surface morphology and crystalline quality. Materials Research Express, 9(10), 105004. (doi: 10.1088/2053-1591/ac9a24)

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Abstract

Metal-organic chemical vapor deposition was successfully used to grow un-doped nonpolar a-plane AlGaN on an r-plane sapphire substrate. High-resolution x-ray (HR-XRD), atomic force microscopy, Polarization Indirect Microscopic Imaging, and Hall effect measurement were used to investigate the effect of the nonpolar a-plane AlGaN layer on the graded AlGaN buffer layer. The results reveal that inserting the AlGaN-graded layer improves the crystalline quality and morphology of the surface. The root means the square value was less than 1.47 nm, while the background electron concentration was −3.9×1017cm−3. In addition, the HR-XRD full width at half maximum indicates improved crystalline quality.

Item Type:Articles
Additional Information:This work was supported by the National Major Scientific Instruments and Equipment Development Project (No. 61827814), Beijing Natural Science Foundation (No. Z190018), the National Natural Science Foundation of China (No. 62105155), the Ministry of Education collaborative project (B17023).
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Akbar, Mr Jehan
Authors: Nasir, A., Xu, B., Ali, I., and Akbar, J.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Materials Research Express
Publisher:IOP Publishing
ISSN:2053-1591
ISSN (Online):2053-1591
Copyright Holders:Copyright © 2022 The Author(s).
First Published:First published in Materials Research Express 9(10):105004
Publisher Policy:Reproduced under a Creative Commons license

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