Dyer, S., Griffin, P. F., Arnold, A. S., Mirando, F., Burt, D. P., Riis, E. and McGilligan, J. P. (2022) Micro-machined deep silicon atomic vapor cells. Journal of Applied Physics, 132, 134401. (doi: 10.1063/5.0114762)
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Abstract
Using a simple and cost-effective water jet process, silicon etch depth limitations are overcome to realize a 6 mm deep atomic vapor cell. While the minimum silicon feature size was limited to a 1.5 mm width in these first generation vapor cells, we successfully demonstrate a two-chamber geometry by including a ∼25 mm meandering channel between the alkali pill chamber and the main interrogation chamber. We evaluate the impact of the channel conductance on the introduction of the alkali vapor density during the pill activation process and mitigate glass damage and pill contamination near the main chamber. Finally, we highlight the improved signal achievable in the 6 mm silicon cell compared to standard 2 mm path length silicon vapor cells.
Item Type: | Articles |
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Additional Information: | The authors acknowledge funding from Innovate UK (Project No. 50133). J.P.M. gratefully acknowledges funding from the Royal Academy of Engineering Research Fellowship. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Mirando, Mr Francesco and Burt, Dr David |
Authors: | Dyer, S., Griffin, P. F., Arnold, A. S., Mirando, F., Burt, D. P., Riis, E., and McGilligan, J. P. |
College/School: | College of Science and Engineering > School of Engineering |
Journal Name: | Journal of Applied Physics |
Publisher: | American Institute of Physics |
ISSN: | 0021-8979 |
ISSN (Online): | 1089-7550 |
Published Online: | 03 October 2022 |
Copyright Holders: | Copyright © 2022 Author(s) |
First Published: | First published in Journal of Applied Physics 132: 134401 |
Publisher Policy: | Reproduced under a Creative Commons License |
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