High-performance infrared photodetectors based on InAs/InAsSb/AlAsSb superlattice for 3.5 µm cutoff wavelength spectra

Jiang, J. et al. (2022) High-performance infrared photodetectors based on InAs/InAsSb/AlAsSb superlattice for 3.5 µm cutoff wavelength spectra. Optics Express, 30(21), pp. 38208-38215. (doi: 10.1364/oe.469147)

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Abstract

High-performance infrared p-i-n photodetectors based on InAs/InAsSb/AlAsSb superlattices on GaSb substrate have been demonstrated at 300K. These photodetectors exhibit 50% and 100% cut-off wavelength of ∼3.2 µm and ∼3.5 µm, respectively. Under -130 mV bias voltage, the device exhibits a peak responsivity of 0.56 A/W, corresponding to a quantum efficiency (QE) of 28%. The dark current density at 0 mV and -130 mV bias voltage are 8.17 × 10−2 A/cm2 and 5.02 × 10−1 A/cm2, respectively. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 3.43 × 109 cm·Hz1/2/W (at a peak responsivity of 2.5 µm) under -130 mV of applied bias.

Item Type:Articles
Additional Information:Chinese Aeronautical Establishment (20182436004); Major Program of the National Natural Science Foundation of China (61790581); Key Technologies Research and Development Program (2018YFA0209104, 2019YFA0705203).
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ding, Dr Ying
Authors: Jiang, J., Wang, G., Wu, D., Xu, Y., Chang, F., Zhou, W., Li, N., Jiang, D., Hao, H., Cui, S., Chen, W., Xu, X., Ni, H., Ding, Y., and Niu, Z.-C.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Optics Express
Publisher:Optica Publishing Group
ISSN:1094-4087
ISSN (Online):1094-4087
Published Online:29 September 2022
Copyright Holders:Copyright © 2022 Optica Publishing Group
First Published:First published in Optics Express 30(21):38208-38215
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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