One-volt, solution-processed organic transistors with self-assembled monolayer-Ta2O5 gate dielectrics

Mohammadian, N. , Faraji, S., Sagar, S., Das, B. C., Turner, M. L. and Majewski, L. A. (2019) One-volt, solution-processed organic transistors with self-assembled monolayer-Ta2O5 gate dielectrics. Materials Chemistry and Physics, 12(16), 2563. (doi: 10.3390/ma12162563) (PMID:31408941) (PMCID:PMC6720892)

Abstract

Low-voltage, solution-processed organic thin-film transistors (OTFTs) have tremendous potential to be key components in low-cost, flexible and large-area electronics. However, for these devices to operate at low voltage, robust and high capacitance gate dielectrics are urgently needed. Herein, the fabrication of OTFTs that operate at 1 V is reported. These devices comprise a solution-processed, self-assembled monolayer (SAM) modified tantalum pentoxide (Ta2O5) as the gate dielectric. The morphology and dielectric properties of the anodized Ta2O5 films with and without n-octadecyltrichlorosilane (OTS) SAM treatment have been studied. The thickness of the Ta2O5 film was optimized by varying the anodization voltage. The results show that organic TFTs gated with OTS-modified tantalum pentoxide anodized at 3 V (d ~7 nm) exhibit the best performance. The devices operate at 1 V with a saturation field-effect mobility larger than 0.2 cm2 V−1 s−1, threshold voltage −0.55 V, subthreshold swing 120 mV/dec, and current on/off ratio in excess of 5 × 103. As a result, the demonstrated OTFTs display a promising performance for applications in low-voltage, portable electronics.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Mohammadian, Dr Navid

Creator Roles

Mohammadian, N.: Conceptualization, Methodology, Validation, Formal analysis, Writing – original draft, Writing – review and editing, Visualization

• Authors: Mohammadian, N., Faraji, S., Sagar, S., Das, B. C., Turner, M. L., and Majewski, L. A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Materials Chemistry and Physics
• Publisher: Elsevier
• ISSN: 0254-0584
• ISSN (Online): 1996-1944
• Published Online: 12 August 2019
• Copyright Holders: Copyright © 2019 by the authors
• First Published: First published in Materials 12(16):2563
• Publisher Policy: Reproduced under a Creative Commons license