Mohammadian, N. , Das, B. C. and Majewski, L. A. (2020) Low-voltage IGZO TFTs using solution-deposited OTS-modified Ta2O5 dielectric. IEEE Transactions on Electron Devices, 67(4), pp. 1625-1631. (doi: 10.1109/TED.2020.2976634)
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Abstract
Low-voltage, high-performance thin film transistors (TFTs) that use amorphous metal oxide (MO) semiconductors as the active layer have been getting tremendous attention due to their essential role in future portable electronic-devices and systems. However, reducing the operating voltage of these devices to or below 1 V is a very challenging task because it is very difficult to obtain low threshold voltage (V TH ) and small subthreshold swing (SS) MO TFTs. In this article, indium gallium zinc oxide (IGZO) TFTs that use solution-deposited Ta 2 O 5 operating at 1 V are demonstrated. To enhance the dielectric properties of the fabricated ultrathin (d ~ 22 nm + 2 nm) tantalum pentoxide films, n-octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) was used. The morphology and electrical properties of both pristine and OTS-treated Ta 2 O 5 films have been studied. The optimized Ta 2 O 5 /OTS IGZO TFTs operate at 1 V with saturation field-effect mobility larger than 2.3 cm 2 /V·s, threshold voltage of around 400 mV, SSs below 90 mV/dec, and current ON-OFF ratios well above 10 5 . The performance of the presented TFTs is high enough for many commercial applications such as disposable sensors or throwaway, low-end electronics significantly reducing the cost of their production.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Mohammadian, Dr Navid |
Authors: | Mohammadian, N., Das, B. C., and Majewski, L. A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Transactions on Electron Devices |
Publisher: | IEEE |
ISSN: | 0018-9383 |
ISSN (Online): | 1557-9646 |
Published Online: | 10 March 2020 |
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