Solution-processed, low voltage tantalum-based memristive switches

Sophocleous, M., Mohammadian, N. , Majewski, L. A. and Georgiou, J. (2020) Solution-processed, low voltage tantalum-based memristive switches. Materials Letters, 269, 127676. (doi: 10.1016/j.matlet.2020.127676)

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Abstract

In this letter, preliminary results showing the memristive behavior of tantalum/tantalum oxide/platinum devices on glass substrates are reported. The ultra-thin (d < 10 nm) tantalum oxide films were obtained using solution-based anodic oxidation (anodization) of Ta in citric acid. The devices were tested using standard ReRAM characterization tests from ±0.5 V to ±5 V and showed a promising memristive behavior. The memristive switches show an almost 80-times change in resistance between the ON and OFF states.

Item Type:Articles (Letter)
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Mohammadian, Dr Navid
Creator Roles:
Mohammadian, N.Conceptualization, Data curation, Writing – original draft
Authors: Sophocleous, M., Mohammadian, N., Majewski, L. A., and Georgiou, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Materials Letters
Publisher:Elsevier
ISSN:0167-577X
ISSN (Online):1873-4979
Published Online:19 March 2020

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