Lapham, P. and Georgiev, V. (2022) Theoretically probing the relationship between barrier length and resistance in Al/AlOx/Al tunnel junctions. Solid-State Electronics, 197, 108442. (doi: 10.1016/j.sse.2022.108442)
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Abstract
Al/AlOx/Al tunnel junctions, also known as Josephson Junctions, are key components of many established and emerging electronic devices. They are an essential component of superconducting qubits. A major drawback is a lack of understanding of how the amorphous AlOx barrier influences the electron transport properties. In this work we combined Tight Binding Density Functional Theory (DFTB) with Non Equilibrium Greens Function (NEGF) to study computationally several Al/AlOx/Al with different barrier lengths. The simulations reveal a weak exponential relationship between barrier length and resistance of the device. However, considerable variability is found between junctions of similar barrier length. The calculations provide evidence of an “effective” barrier length significantly smaller than the actual (physical) barrier length. The resistance and effective barrier is found to be sensitively influenced by the local atomic structure of the amorphous barrier, which explains the junction to junction variability.
| Item Type: | Articles |
|---|---|
| Additional Information: | Paul Lapham reports financial support was provided by Engineering and Physical Sciences Research Council (EP/P009972/1). Vihar Georgiev reports financial support was provided by Quantum Computng and Simulaton ub Partnership Resource Fund. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Lapham, Mr Paul and Georgiev, Professor Vihar |
| Authors: | Lapham, P., and Georgiev, V. |
| College/School: | College of Science and Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Solid-State Electronics |
| Publisher: | Elsevier |
| ISSN: | 0038-1101 |
| ISSN (Online): | 1879-2405 |
| Published Online: | 30 August 2022 |
| Copyright Holders: | Copyright © 2022 The Author(s) |
| First Published: | First published in Solid-State Electronics 197: 108442 |
| Publisher Policy: | Reproduced under a Creative Commons license |
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