Zumeit, A., Dahiya, A. S. , Shakthivel, D. and Dahiya, R. (2021) Silicon Nanoribbons Based Printed Transistors for High-Performance Flexible Electronics. In: 2021 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS), 20-23 Jun 2021, ISBN 9781728191737 (doi: 10.1109/FLEPS51544.2021.9469776)
Full text not currently available from Enlighten.
Abstract
In this work, we present a room-temperature (RT) processable p-type Si nanoribbons-based field effect transistor (NRFETs) as building blocks for high performance flexible electronics. The nanoribbons (NR) fabrication process was optimized for selective p-type doping for source/drain and then they were transfer printed on flexible substrate. Following this the high quality silicon nitride (SiNx) dielectric was deposited at RT through inductively coupled plasma chemical vapour deposition ICP-CVD method. The transfer and output characteristics of p-type NRFET are presented along with device stability evaluation for a total of 100 bending cycles. The extracted mobility (~85 cm 2 .V -1 s -1 ) and current on/off ratio (>10 3 ) show excellent potential for using transfer printed p-type Si NRs as building blocks for high performance flexible CMOS circuits.
Item Type: | Conference Proceedings |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Dahiya, Dr Abhishek Singh and Zumeit, Ayoub and Dahiya, Professor Ravinder and Shakthivel, Dr Dhayalan |
Authors: | Zumeit, A., Dahiya, A. S., Shakthivel, D., and Dahiya, R. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
ISBN: | 9781728191737 |
Published Online: | 05 July 2021 |
University Staff: Request a correction | Enlighten Editors: Update this record