A High-Power InP Resonant Tunnelling Diode Heterostructure for 300-GHz Oscillator Sources

Cimbri, D. , Morariu, R., Ofiare, A. and Wasige, E. (2022) A High-Power InP Resonant Tunnelling Diode Heterostructure for 300-GHz Oscillator Sources. In: 2022 17th European Microwave Integrated Circuits Conference (EuMIC), Milan, Italy, 26-27 September 2022, pp. 204-207. ISBN 9782874870705 (doi: 10.23919/EuMIC54520.2022.9923482)

Abstract

A high-power double-barrier resonant tunnelling diode (RTD) epitaxial structure in InP technology is reported. The heterostructure exhibits moderate available current density ΔJ≃1.4 mA/μm2 and large voltage swing ΔV≃1.2 V, resulting in a maximum RF power PRF,max≃0.31 mW/um2 , and over 530 GHz bandwidth, being 25 μm2 , 36 μm2 , and 49 μm2 large RTD devices expected to deliver up to 5 mW, 7 mW, and 10 mW at 300 GHz, respectively. Distributed inductors in both coplanar and microstrip geometry are designed through full 3D electromagnetic simulations, proving the feasibility of the proposed approach for the practical realisation of high-power 300-GHz oscillator sources employing low-cost optical lithography.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Wasige, Professor Edward and Morariu, Mr Razvan and Ofiare, Dr Afesomeh and Cimbri, Mr Davide
• Authors: Cimbri, D., Morariu, R., Ofiare, A., and Wasige, E.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISBN: 9782874870705
• Copyright Holders: Copyright © 2022 EuMA
• First Published: First published in 2022 17th European Microwave Integrated Circuits Conference (EuMIC)
• Publisher Policy: Reproduced in accordance with the publisher copyright policy

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