Approach to Normally-Off AlGaN/GaN MIS-HEMTs with High Drain Current Using AlGaN Overgrowth Technique

Ofiare, A., Taking, S., Elksne, M. , Al-Khalidi, A. , Ghosh, S., Kappers, M., Oliver, R.A. and Wasige, E. (2022) Approach to Normally-Off AlGaN/GaN MIS-HEMTs with High Drain Current Using AlGaN Overgrowth Technique. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

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Abstract

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Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Al-Khalidi, Dr Abdullah and Elksne, Mrs Maira and Taking, Dr Sanna and Ofiare, Dr Afesomeh
Authors: Ofiare, A., Taking, S., Elksne, M., Al-Khalidi, A., Ghosh, S., Kappers, M., Oliver, R.A., and Wasige, E.
College/School:College of Science and Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2022 The Authors
First Published:First published in UK Semiconductors 2022
Publisher Policy:Reproduced with the permission of the Publisher
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