Approach to Normally-Off AlGaN/GaN MIS-HEMTs with High Drain Current Using AlGaN Overgrowth Technique

Ofiare, A., Taking, S., Elksne, M. , Al-Khalidi, A. , Ghosh, S., Kappers, M., Oliver, R.A. and Wasige, E. (2022) Approach to Normally-Off AlGaN/GaN MIS-HEMTs with High Drain Current Using AlGaN Overgrowth Technique. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Abstract

No abstract available.

• Item Type: Conference or Workshop Item
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Wasige, Professor Edward and Al-Khalidi, Dr Abdullah and Elksne, Mrs Maira and Taking, Dr Sanna and Ofiare, Dr Afesomeh
• Authors: Ofiare, A., Taking, S., Elksne, M., Al-Khalidi, A., Ghosh, S., Kappers, M., Oliver, R.A., and Wasige, E.
• College/School: College of Science and Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Copyright Holders: Copyright © 2022 The Authors
• First Published: First published in UK Semiconductors 2022
• Publisher Policy: Reproduced with the permission of the Publisher

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