Dhar, R., Kumar, N. , Pascual Garcia, C. and Georgiev, V. (2022) Assessing the effect of scaling high-aspect-ratio ISFET with physical model interface for nano-biosensing application. Solid-State Electronics, 195, 108374. (doi: 10.1016/j.sse.2022.108374)
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Abstract
In this paper, technology computer-aided design (TCAD) simulations of ion-sensitive field-effect transistors (ISFETs) are implemented using a physical model interface (PMI). Our simulations are based on a combination of analytical and numerical methods which are combined in a single simulation framework. ISFETs with different Si channel widths, such as 10nm and 50nm, have been simulated for this work. Our results reveal a correlation between the device dimensions and ISFET sensitivity (α). Also, the variations of H+ ions, OH- ions and surface potential (Ψ0) with respect to distance from the electrolyte/oxide interface are analyzed.
Item Type: | Articles |
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Additional Information: | This project has received funding from the European Union's Horizon 2020 research and innovation program under grant agreement No 862539-Electromed-FET OPEN. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Dhar, Ms Rakshita Pritam and Kumar, Dr Naveen and Georgiev, Professor Vihar |
Authors: | Dhar, R., Kumar, N., Pascual Garcia, C., and Georgiev, V. |
College/School: | College of Science and Engineering > School of Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Solid-State Electronics |
Publisher: | Elsevier |
ISSN: | 0038-1101 |
ISSN (Online): | 1879-2405 |
Published Online: | 04 May 2022 |
Copyright Holders: | Copyright © 2022 Elsevier Ltd. |
First Published: | First published in Solid-State Electronics 195:108374 |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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