Cimbri, D. , Morariu, R., Ofiare, A. and Wasige, E. (2022) In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes with High-Power Performance in the Low-Terahertz Band. In: 2022 Fifth IEEE International Workshop on Mobile Terahertz Systems (IWMTS), Duisburg, Germany, 04-06 Jul 2022, ISBN 9781665482752 (doi: 10.1109/IWMTS54901.2022.9832442)
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Abstract
We report about an In0.53Ga0.47As/AlAs doublebarrier resonant tunnelling diode (RTD) epitaxial structure that features high-power capabilities at low-terahertz frequencies (∼ 100−300 GHz). The heterostructure was designed using a TCAD-based quantum transport simulator and experimentally investigated through the fabrication and characterisation of RTD devices. The high-frequency RF power performance of the epitaxial structure was analysed based on the extracted small-signal equivalent circuit parameters. Our analysis shows that a 9 µm2, 16 µm2, and 25 µm2 large RTD device can be expected to deliver around 2 mW, 4 mW, and 6 mW of RF power at 300 GHz.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Wasige, Professor Edward and Morariu, Mr Razvan and Ofiare, Dr Afesomeh and Cimbri, Mr Davide |
| Authors: | Cimbri, D., Morariu, R., Ofiare, A., and Wasige, E. |
| College/School: | College of Science and Engineering > School of Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISBN: | 9781665482752 |
| Published Online: | 21 July 2022 |
| Copyright Holders: | Copyright © 2022 IEEE |
| Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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