Locating environmental charge impurities with confluent laser spectroscopy of multiple quantum dots

Hauck, M., Seilmeier, F., Beavan, S. E., Badolato, A. , Petroff, P. M. and Högele, A. (2014) Locating environmental charge impurities with confluent laser spectroscopy of multiple quantum dots. Physical Review B, 90(23), 235306. (doi: 10.1103/PhysRevB.90.235306)

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Abstract

We used resonant laser spectroscopy of multiple InGaAs quantum dots to spatially locate charge fluctuators in the surrounding semiconductor matrix. By mapping out the resonance condition between a narrow-band laser and the neutral exciton transitions of individual dots in a field effect device, we identified spectral discontinuities as arising from charging and discharging events that take place within the volume adjacent to the quantum dots. Our analysis suggests that residual carbon dopants are a major source of charge-fluctuating traps in quantum dot heterostructures.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Badolato, Professor Antonio
Authors: Hauck, M., Seilmeier, F., Beavan, S. E., Badolato, A., Petroff, P. M., and Högele, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Physical Review B
Publisher:American Physical Society
ISSN:1098-0121
ISSN (Online):1550-235X
Published Online:08 December 2014

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