THz Silicon Photonics: An Intersubband Emitter

David, S. et al. (2022) THz Silicon Photonics: An Intersubband Emitter. In: Photonics West - Quantum Sensing and Nano Electronics and Photonics XVIII, San Francisco, California, United States, 22-27 January, 2022, (doi: 10.1117/12.2609437)

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A terahertz intersubband emitter based on silicon is presented. The emission originates from n-type Ge/SiGe quantum cascade structures. We designed a strain-compensated single quantum active region based on a vertical optical transition and tensile-strained Si0.15Ge0.85 barriers. The 51 quantum cascade periods (corresponding to 4.2 μm) were grown on a Si1-xGex reverse graded virtual substrate on Ge/Si(001) substrates. Deeply etched diffraction gratings were processed and the surface emitting devices were characterized at 5 K with a Fourier transform infrared spectrometer. We observed two distinct peaks at 3.4 and 4.9 THz with a line broadening of 20%. This is an important step towards the realization of an Ge/SiGe THz quantum cascade laser.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Mirza, Dr Muhammad M A
Authors: David, S., Muhammad, M., Luca, P., Michele, M., Sergej, M., Mattias, B., Thomas, G., Stefan, B., Michele, V., Chiara, C., Michele, O., Cedric, C.-W., Giovanni, C., Luciana, D. G., Monica, D. S., Douglas, P., Jerome, F., and Giacomo, S.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering
Copyright Holders:© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE)
First Published:First published in Proc. SPIE PC12009, Quantum Sensing and Nano Electronics and Photonics XVIII, PC120090D (5 March 2022)
Publisher Policy:Reproduced in accordance with the publisher copyright policy
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