THz emission from n-type Ge/SiGe quantum cascade structures

David, S. et al. (2021) THz emission from n-type Ge/SiGe quantum cascade structures. Proceedings Volume 11685, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIV, California, United States, 6-12 March 2021. (doi: 10.1117/12.2578823)

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We report electroluminescence at 14meV and 20meV from a n-type Ge/Si0.15Ge0.85 quantum cascade heterostructure on Si substrate grown by ultra-high vacuum chemical vapour deposition. The electroluminescence signal of the single quantum well active region design, extracted through diffraction gratings from mesa structures, is compared with its GaAs counterpart.The spectral features agree well with modeling based on Non-equilibrium Green's function calculations. The observed electroluminescence peaks show a full width at half maximum of 3meV and 4meV. These results are an important step towards the realization of an n-type THz quantum cascade laser on a non-polar material system.

Item Type:Conference or Workshop Item
Additional Information:Conference presentation video.
Glasgow Author(s) Enlighten ID:Mirza, Dr Muhammad M A
Authors: David, S., Muhammad, M., Luca, P., Michele, M., Luciana, D. G., Monica, D. S., Michele, V., Michele, O., Giovanni, C., Thomas, G., Stefan, B., Douglas, P., Jerome, F., and Giacomo, S.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering

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